AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
?90
?10
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD
= 28 Vdc, I
DQ
= 1600 mA, f1 = 879.95 MHz
f2 = 880.05 MHz, Two?Tone Measurements
3rd Order
?20
?30
?40
?50
100 500
IMD, INTERMODULATION DISTORTION (dBc)
?60
5th Order
7
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
15010
?60
?20
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 220 W (PEP)
IDQ
= 1600 mA, Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
?30
?40
?50
IMD, INTERMODULATION DISTORTION (dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
41
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
61
59
57
49
Actual
Ideal
51
29
P
out
, OUTPUT POWER (dBm)
55
53
31 33 35 37 39
P6dB = 54.95 dBm (312.77 W)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 10. Single-Carrier N-CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
0 ?55
Pout, OUTPUT POWER (WATTS) AVG.
50
?30
30
10
?35
?40
?50
1 30010 100
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
Gps
ACPR
?30C
40
20
?45
85C
TC
= ?30
C
25C
ηD
?80
?70
VDD= 28 Vdc, IDQ
= 1600 mA
f = 880 MHz, N?CDMA IS?95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
P3dB = 54.60 dBm (288.76 W)
P1dB = 54.05 dBm (255.09 W)
25C
25C
85C
相关PDF资料
MRF6S18060NBR1 MOSFET RF N-CH 26V 60W TO272-4
MRF6S18100NR1 MOSFET RF N-CH 28V 100W TO2704
MRF6S18140HSR5 MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100HSR5 MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5 MOSFET RF N-CHAN 28V 19W NI-780S
MRF6S19140HSR5 MOSFET RF N-CHAN 28V 29W NI-880S
相关代理商/技术参数
MRF6S18060MBR1 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18060NBR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3 功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray